buried-channel metal-oxide-semiconductor
- buried-channel metal-oxide-semiconductor
- MOP darinys su paslėptuoju kanalu
statusas T sritis radioelektronika
atitikmenys: angl. buried-channel metal-oxide-semiconductor; buried-channel MOS structure
vok. Metall-Oxid-Halbleiter-Struktur mit vergrabenem Kanal, f; MOS-Struktur mit vergrabenem Kanal, f
rus. МОП-структура со скрытым каналом, f
pranc. structure MOS à canal caché, f
Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“.
Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas.
2000.
Look at other dictionaries:
buried-channel MOS structure — MOP darinys su paslėptuoju kanalu statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit… … Radioelektronikos terminų žodynas
MOP darinys su paslėptuoju kanalu — statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit vergrabenem Kanal, f rus. МОП структура… … Radioelektronikos terminų žodynas
MOS-Struktur mit vergrabenem Kanal — MOP darinys su paslėptuoju kanalu statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit… … Radioelektronikos terminų žodynas
Metall-Oxid-Halbleiter-Struktur mit vergrabenem Kanal — MOP darinys su paslėptuoju kanalu statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit… … Radioelektronikos terminų žodynas
structure MOS à canal caché — MOP darinys su paslėptuoju kanalu statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit… … Radioelektronikos terminų žodynas
МОП-структура со скрытым каналом — MOP darinys su paslėptuoju kanalu statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit… … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
High-voltage direct current — HVDC or high voltage, direct current electric power transmission systems contrast with the more common alternating current systems as a means for the bulk transmission of electrical power. The modern form of HVDC transmission uses technology… … Wikipedia
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia